| 摘要 |
PROBLEM TO BE SOLVED: To manufacture silicon single crystals with high productivity at a low cost, by remelting the single crystal when it is dislocated during being drawn up and grown. SOLUTION: In a method of manufacturing silicon single crystals by MCZ (magnetic field-applied Czochralski) method provided with a quartz crucible 13 filled with a silicon melt 12, a side heater 15 and a bottom heater 16, a radiation shield 19 for shielding the silicon single crystal 18 from radiation from the side heater 15, electromagnets 20 and 21 and the like; when the silicon single crystal 18 being drawn up and grown is dislocated, a gap X between the lower end of the radiation shield 19 and the surface of the silicon melt 12 is enlarged and the dislocated silicon single crystal 18 is lowered to be in a non-magnetic field state and melted in the silicon melt 12. Thereafter, a magnetic field is applied, and the gap X is returned to be in the single crystal draw-up condition to re-draw up single crystals. COPYRIGHT: (C)2009,JPO&INPIT
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