An integrated circuit device includes a first metal layer including aluminum. The integrated circuit device includes a second metal layer including an interconnect structure. The interconnect structure includes a layer of first material including aluminum. The integrated circuit device includes an inter-diffusion layer that includes aluminum. The inter-diffusion layer is proximate to the first metal layer and proximate to the layer of first material including aluminum. The integrated circuit device includes a self-forming barrier layer that includes aluminum. The self-forming barrier layer is proximate to a dielectric layer and proximate to the layer of first material including aluminum.
申请公布号
WO2016118634(A1)
申请公布日期
2016.07.28
申请号
WO2016US14140
申请日期
2016.01.20
申请人
QUALCOMM INCORPORATED
发明人
XU, JEFFREY JUNHAO;BAO, JUNJING;ZHU, JOHN JIANHONG;SONG, STANLEY SEUNGCHUL;MOJUMDER, NILADRI NARAYAN;YEAP, CHOH FEI