SEMICONDUCTOR STRUCTURE CONTAINING LOW-RESISTANCE SOURCE AND DRAIN CONTACTS

摘要

Semiconductor structures having a source contact and a drain contact that exhibit reduced contact resistance and methods of forming the same are disclosed. In one embodiment of the present application, the reduced contact resistance is provided by forming a layer of a dipole metal or metal-insulator-semiconductor (MIS) oxide between an epitaxial semiconductor material (providing the source region and the drain region of the device) and an overlying metal semiconductor alloy. In yet other embodiment, the reduced contact resistance is provided by increasing the area of the source region and drain region by patterning the epitaxial semiconductor material that constitutes at least an upper portion of the source region and drain region of the device.

主权项

1. A method of forming a semiconductor structure, said method comprising:
providing a structure comprising at least one first functional gate structure located on a first semiconductor material portion within a pFET device region of a semiconductor substrate and at least one second functional gate structure located on a second semiconductor material portion within an nFET device region of the semiconductor substrate, wherein a first epitaxial semiconductor material is located on each side of said at least one first functional gate structure and in contact with a surface of said first semiconductor material portion, and a second epitaxial semiconductor material is located on each side of said at least one second functional gate structure and in contact with a surface of said second semiconductor material portion, and wherein a surface of said first epitaxial semiconductor material includes a high k dielectric layer disposed thereon; forming a layer of a dipole metal or a metal-insulator-semiconductor oxide on said second epitaxial semiconductor material, but not said first epitaxial semiconductor material; removing said high k dielectric layer from said surface of said first epitaxial semiconductor material; and forming a first metal semiconductor alloy on said first epitaxial semiconductor material and a second metal semiconductor alloy in direct contact with said layer of said dipole metal or said metal-insulator-semiconductor oxide.