发明名称 PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide an art favorable to reduce the occurrence of a defective part while reducing a dark output.SOLUTION: A photoelectric conversion device manufacturing method comprises: a process of forming a conductor pattern on a semiconductor substrate having a photoelectric conversion part by an aluminum-containing material; a process of forming a hydrogen-containing insulation film on the conductor pattern; a process of performing a first heat treatment on a structure including the semiconductor substrate, the conductor pattern and the insulation film in a hydrogen-containing atmosphere; a process of forming a protection film having hydrogen permeability lower than that of the insulation film on the insulation film after the first heat treatment; and a process of performing a second heat treatment on a structure including the semiconductor substrate, the conductor pattern, the insulation film and the protection film in a hydrogen-containing atmosphere after formation of the protection film. A temperature of the first heat treatment is over a temperature when forming the insulation film and equal to or less than a temperature when forming the protection film.SELECTED DRAWING: Figure 3
申请公布号 JP2016213305(A) 申请公布日期 2016.12.15
申请号 JP20150095228 申请日期 2015.05.07
申请人 CANON INC 发明人 HARA KOJI;UKIGAYA NOBUTAKA;AOKI TAKESHI;SUZUKI YUKINOBU
分类号 H01L27/146;C23C16/42;H01L31/10 主分类号 H01L27/146
代理机构 代理人
主权项
地址