发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 In the present invention, provided are a semiconductor device having a semiconductor-element-mounting substrate on which a semiconductor element has been mounted via an adhesive having an exothermic-reaction curing start temperature of 130 DEG C or below as measured with a differential scanning calorimeter at a heating rate of 10 DEG C/minute, and a process for its fabrication. <IMAGE>
申请公布号 EP1111667(A4) 申请公布日期 2005.06.22
申请号 EP19990931560 申请日期 1999.07.27
申请人 HITACHI CHEMICAL COMPANY, LTD. 发明人 KOUSAKA, T.;SUZUKI, NAOYA;TANAKA, TOSHIAKI;YASUDA, M.;KANEDA, AIZOU
分类号 H01L21/58;H01L23/31;H01L23/498 主分类号 H01L21/58
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