发明名称 |
Isotropic polycrystalline silicon |
摘要 |
A high-quality isotropic polycrystalline silicon (poly-Si) and a method for fabricating high quality isotropic poly-Si film are provided. The method includes forming a film of amorphous silicon (a-Si) and using a MISPC process to form poly-Si film in a first area of the a-Si film. The method then anneals a second area, included in the first area, using a Laser-Induced Lateral Growth (LILaC) process. In some aspects, a 2N-shot laser irradiation process is used as the LILaC process. In some aspects, a directional solidification process is used as the LILaC process. In response to using the MISPC film as a precursor film, the method forms low angle grain boundaries in poly-Si in the second area.
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申请公布号 |
US2005170568(A1) |
申请公布日期 |
2005.08.04 |
申请号 |
US20050099198 |
申请日期 |
2005.04.04 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
MORIGUCHI MASAO;VOUTSAS APOSTOLOS T.;CROWDER MARK A. |
分类号 |
H01L21/20;H01L21/336;H01L29/16;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/20 |
代理机构 |
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主权项 |
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地址 |
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