Nitride semiconductor light emitting device and method for manufacturing the same

摘要

The invention relates to a nitride semiconductor light emitting device having a high light emission efficiency, low operating voltage and high resistance to electrostatic discharge. The nitride semiconductor light emitting device includes an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer formed in their order on a substrate. The device also includes a transparent conductive oxide multi-layer formed on the p-type nitride semiconductor layer. The transparent conductive oxide multi-layer includes two or more layers or transparent conductive oxide layers having different levels of conductivity.