| 摘要 |
PROBLEM TO BE SOLVED: To reduce erroneous writing when reading data in a memory. SOLUTION: The sense amplifier circuit 10 reads data from the STT-MRAM storing the data through read lines LIOFx and LIOBx (x= 1, 0) to the magnetoresistive elements connected to bit lines BLxx (xx= 00, 01, 10, 11, ..., M0, M1) and word lines WLy (y= 0, 1, ..., 2n, 2n+1). When reading the data, it controls the bias voltages Vbias to apply to the magnetoresistive elements by changing them depending on their resistances. COPYRIGHT: (C)2008,JPO&INPIT |
