发明名称 SYSTEM AND METHOD FOR ADAPTIVE MEMORY LAYERS IN A MEMORY DEVICE
摘要 Systems and methods for implementing adaptive memory layers in a storage system are disclosed. A storage system may include a non-volatile memory with memory cells configurable to each of a plurality of bit-per-cell capacities and divided into dynamically re-sizable memory layers defined by memory cells of a particular capacity. A memory layer adjustment module associated with a controller of the storage system is configured to, upon detection of a maintenance trigger, compare the amount of valid data and overprovisioning in each layer to a target amount and to redistribute valid data and physical capacity among the memory layers according to a predetermined table or algorithm in order to optimize performance of each memory layer.
申请公布号 US2016179372(A1) 申请公布日期 2016.06.23
申请号 US201414573959 申请日期 2014.12.17
申请人 SanDisk Technologies Inc. 发明人 Sinclair Alan Welsh
分类号 G06F3/06;G06F11/10;G11C29/50;G11C16/26 主分类号 G06F3/06
代理机构 代理人
主权项 1. A storage system comprising: a nonvolatile memory having a plurality of memory cells, each of the plurality of memory cells programmable in any of a plurality of bit-per-cell capacities, the plurality of memory cells defining a plurality of memory layers, wherein each of the plurality of memory layers is defined by a portion of the plurality of memory cells currently having a same bit-per-cell capacity, and a bit-per-cell capacity of each memory layer differs from a bit-per-cell capacity of each other memory layer; and a memory layer adjustment module in communication with the non-volatile memory, the memory layer adjustment module configured to: determine a current logical fullness of the storage system;compare a logical fullness of one of the plurality of memory layers to a target logical fullness based on the determined logical fullness; andin response to determining that the logical fullness of the one of the plurality of memory layers is greater than the target logical fullness: select a block from the one of the plurality of memory layers;copy valid data from the selected block to a different one of the plurality of memory layers; anddesignate the selected block as a free block for use by any of the plurality of layers.
地址 Plano TX US