发明名称 |
SYSTEM AND METHOD FOR ADAPTIVE MEMORY LAYERS IN A MEMORY DEVICE |
摘要 |
Systems and methods for implementing adaptive memory layers in a storage system are disclosed. A storage system may include a non-volatile memory with memory cells configurable to each of a plurality of bit-per-cell capacities and divided into dynamically re-sizable memory layers defined by memory cells of a particular capacity. A memory layer adjustment module associated with a controller of the storage system is configured to, upon detection of a maintenance trigger, compare the amount of valid data and overprovisioning in each layer to a target amount and to redistribute valid data and physical capacity among the memory layers according to a predetermined table or algorithm in order to optimize performance of each memory layer. |
申请公布号 |
US2016179372(A1) |
申请公布日期 |
2016.06.23 |
申请号 |
US201414573959 |
申请日期 |
2014.12.17 |
申请人 |
SanDisk Technologies Inc. |
发明人 |
Sinclair Alan Welsh |
分类号 |
G06F3/06;G06F11/10;G11C29/50;G11C16/26 |
主分类号 |
G06F3/06 |
代理机构 |
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代理人 |
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主权项 |
1. A storage system comprising:
a nonvolatile memory having a plurality of memory cells, each of the plurality of memory cells programmable in any of a plurality of bit-per-cell capacities, the plurality of memory cells defining a plurality of memory layers, wherein each of the plurality of memory layers is defined by a portion of the plurality of memory cells currently having a same bit-per-cell capacity, and a bit-per-cell capacity of each memory layer differs from a bit-per-cell capacity of each other memory layer; and a memory layer adjustment module in communication with the non-volatile memory, the memory layer adjustment module configured to:
determine a current logical fullness of the storage system;compare a logical fullness of one of the plurality of memory layers to a target logical fullness based on the determined logical fullness; andin response to determining that the logical fullness of the one of the plurality of memory layers is greater than the target logical fullness:
select a block from the one of the plurality of memory layers;copy valid data from the selected block to a different one of the plurality of memory layers; anddesignate the selected block as a free block for use by any of the plurality of layers. |
地址 |
Plano TX US |