EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE, ELECTRONIC DEVICE, METHOD FOR PRODUCING EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE, AND METHOD FOR PRODUCING ELECTRONIC DEVICE

摘要

The present invention is an epitaxial substrate for an electronic device, the epitaxial substrate having a Si-based substrate, an AlN initial layer provided on the Si-based substrate, and a buffer layer provided on the AlN initial layer, and the epitaxial substrate is characterized in that the roughness Sa of the surface on the buffer layer side of the AlN initial layer is 4 nm or more. Due to this configuration, provided is an epitaxial substrate for an electronic device, in which V-shaped pits in the buffer layer structure are prevented and longitudinal leak current characteristics can be improved when an electronic device is produced.