| 摘要 |
This solid-state imaging device is provided with: a first semiconductor substrate wherein first photoelectric conversion layers, which photoelectrically convert incident light in a first wavelength band, are formed in a two-dimensional matrix; a second semiconductor substrate wherein second photoelectric conversion layers, which photoelectrically convert incident light, are formed in a two-dimensional matrix; a conductive layer which is arranged between the first semiconductor substrate and the second semiconductor substrate and has a conductivity corresponding to the second photoelectric conversion layers; and an insulating film which is arranged between the second semiconductor substrate and the conductive layer and has insulating properties corresponding to the second photoelectric conversion layers. Light transmitted through the first photoelectric conversion layers, the conductive layer and the insulating film is incident on the second semiconductor substrate. A predetermined voltage is applied to the conductive layer, and the wavelength of light in a second wavelength band photoelectrically converted by the second photoelectric conversion layers in cases where the predetermined voltage is applied to the conductive layer is longer than the wavelength of light in a wavelength band photoelectrically converted by the second photoelectric conversion layers in cases where the predetermined voltage is not applied to the conductive layer. |
