METHODS OF FORMING CONDUCTIVE PILLARS FOR SEMICONDUCTOR DEVICES, METHODS OF FORMING ELECTRICAL INTERCONNECTS, AND SEMICONDUCTOR DEVICES

摘要

A method of forming a conductive material on a semiconductor device. The method comprises removing at least a portion of a conductive pad within an aperture in a dielectric material over a substrate. The method further comprises forming a seed material at least within a bottom of the aperture and over the dielectric material, forming a protective material over the seed material within the aperture, and forming a conductive pillar in contact with the seed material through an opening in the protective material over surfaces of the seed material within the aperture. A method of forming an electrical connection between adjacent semiconductor devices, and a semiconductor device, are also described.

主权项

1. A method of forming a conductive material on a semiconductor device, the method comprising:
removing at least a portion of a conductive pad within an aperture in a dielectric material over a substrate; forming a seed material at least within a bottom of the aperture and over the dielectric material; forming a protective material over the seed material within the aperture; and forming a conductive pillar in contact with the seed material through an opening in the protective material over surfaces of the seed material within the aperture.