Thin film transistor and manufacturing method thereof

摘要

A thin film transistor disposed on a substrate, includes a gate, a gate insulation layer, a first source/drain, a semiconductor layer and a second source/drain. The gate is disposed on the substrate. The gate insulation layer covers the gate and the substrate. The first source/drain is disposed on the gate insulation layer. The semiconductor layer is disposed above the gate, extends from the gate insulation layer to the first source/drain, and includes a first portion disposed on the first source/drain and a second portion connected to the first portion. An electrical conductivity of the first portion is higher than that of the second portion. The second source/drain covers and is in contact with the second portion. A manufacturing method of thin film transistor is further provided.

主权项

1. A manufacturing method of a thin film transistor, comprising following steps:
forming a gate on a substrate; forming a gate insulation layer on the substrate to cover the gate; forming a first source/drain on the gate insulation layer; forming a semiconductor material layer on the gate insulation layer and the first source/drain, wherein the semiconductor material layer is located above the gate; forming a second source/drain on the semiconductor material layer and the gate insulation layer; and increasing an electrical conductivity of the semiconductor material layer located on the first source/drain to form a semiconductor layer, wherein the semiconductor layer comprises a first portion located on the first source/drain and a second portion connected with the first portion, and an electrical conductivity of the first portion is higher than an electrical conductivity of the second portion.