| 发明名称 | Flat panel image sensor and method of manufacturing thereof | ||
| 摘要 | A flat panel image sensor includes a thin film transistor (TFT) and diode array, a conformal insulating layer on a top surface of the TFT and diode array, a planarized dielectric layer on a top surface of the conformal insulating layer, a first metalized via in the planarized dielectric layer and the conformal insulating layer to contact a metalized portion of the TFT and diode array, a second metalized via in the planarized dielectric layer and the conformal insulation layer to contact a diode portion of the TFT and diode array, and a passivation layer over the first and second vias and an upper surface of the planarized dielectric layer. | ||
| 申请公布号 | US9269737(B1) | 申请公布日期 | 2016.02.23 |
| 申请号 | US201414516982 | 申请日期 | 2014.10.17 |
| 申请人 | DPIX, LLC | 发明人 | O'Rourke Shawn;Rodriquez Robert |
| 分类号 | H01L27/14;H01L27/146;H01L27/12;H01L31/028 | 主分类号 | H01L27/14 |
| 代理机构 | Hogan Lovells US LLP | 代理人 | Meza Peter J.;Hogan Lovells US LLP |
| 主权项 | 1. A method of manufacturing a flat panel image sensor comprising: providing a thin film transistor (TFT) and diode array; applying a conformal insulating layer on a top surface of the TFT and diode array; depositing a planarized dielectric layer on a top surface of the conformal insulating layer; photoexposing the planarized dielectric layer; forming a first via in the planarized dielectric layer and the conformal insulating layer to expose a metalized portion of the TFT and diode array; forming a second via in the planarized dielectric layer and the conformal insulation layer to expose a diode portion of the TFT and diode array; metalizing the first and second vias; and passivating the first and second vias and an upper surface of the planarized dielectric layer. | ||
| 地址 | Colorado Springs CO US | ||