发明名称 Interposer with overmolded vias
摘要 An interposer for a packaged semiconductor device is formed by applying an encapsulant to (e.g., by overmolding or applying lamination of tapes to) a perforated metal foil having vertical metal tabs that form the vertical metal vias in the interposer. A solid metal foil can be stamped using a micro-stamping tool to form the perforated foil and vertical tabs. Bump pads and/or re-distribution layer (RDL) traces are formed (e.g., using wafer fabrication processes or by applying flexible tape RDL layers) on the top and back sides of the foil to complete the manufacturing process. Such interposers can be cheaper to manufacture than conventional interposers having silicon or glass substrates with through-silicon vias (TSVs) formed using wafer fabrication processes.
申请公布号 US9269659(B1) 申请公布日期 2016.02.23
申请号 US201514591934 申请日期 2015.01.08
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 Foong Chee Seng;Tan Lan Chu
分类号 H01L23/49;H01L23/498;H01L21/48;H01L21/56;H01L21/288;H01L21/285;H01L25/00;H01L23/00;H01L25/065 主分类号 H01L23/49
代理机构 代理人 Bergere Charles E.
主权项 1. A method, comprising: (a) perforating a metal foil to form vertical metal tabs extending from the perforated foil; (b) applying an encapsulant to the perforated foil to encapsulate the vertical metal tabs; and (c) providing metal features on top and back sides of the perforated foil to produce an interposer.
地址 Austin TX US