Methods of removing portions of at least one fin structure so as to form isolation regions when forming FinFET semiconductor devices

摘要

One illustrative method disclosed herein includes, among other things, forming a plurality of first and second fins that are made of different semiconductor materials that may be selectively etched relative to one another, forming a first insulating material between the plurality of first and second fins, forming an etch mask above the first and second fins that exposes a portion of at least one first fin and exposes a portion of at least one second fin, performing an etching process to remove the exposed portion of the at least one first fin selectively to the first insulating material and the exposed portion of the at least one second fin so as to thereby define at least one removed fin cavity in the first insulating material, removing the patterned etch mask, and forming a second insulating material in the at least one removed fin cavity.

主权项

1. A method, comprising:
forming a plurality of first and second fins above a semiconductor substrate, wherein said first fins are made of a first semiconductor material and said second fins are made of a second semiconductor material, wherein said first and second semiconductor materials are different from one another and may be selectively etched relative to one another; forming a first insulating material above said substrate and between said plurality of first and second fins; forming a patterned etch mask above said plurality of first and second fins, said patterned etch mask having an opening that exposes a portion of at least one first fin and exposes a portion of at least one second fin; performing an etching process through said opening in said patterned etch mask to remove said exposed portion of said at least one first fin selectively to said first insulating material and said exposed portion of said at least one second fin so as to thereby define at least one removed fin cavity in said first insulating material; removing said patterned etch mask; and forming a second insulating material in said at least one removed fin cavity.