发明名称 Ni OR Ni ALLOY SPUTTERING TARGET
摘要 PROBLEM TO BE SOLVED: To provide a Ni or a Ni alloy sputtering target suitable for a magnetron sputtering capable of uniformly depositing a film on a substrate and of uniformizing a hardness distribution and uniformizing a leakage magnetic field, and a manufacturing method of the target.SOLUTION: A manufacturing method of a Ni or a Ni alloy sputtering target for a thin film formation, the target being produced by repeatedly cold-rolling a hot-forged Ni or a Ni alloy at a various multi-step processing rate to form a plate body of a predetermined thickness, then performing a heat treatment on the plate body, and processing the plate body to a predetermined shape. The Ni or Ni alloy sputtering target for the thin film formation, the target providing an in-plane variation of leakage magnetic field in the plate body of 12% or less.SELECTED DRAWING: Figure 1
申请公布号 JP2016216829(A) 申请公布日期 2016.12.22
申请号 JP20160123567 申请日期 2016.06.22
申请人 MITSUBISHI MATERIALS CORP 发明人 MISEKI KENICHIRO
分类号 C23C14/34;C22F1/10 主分类号 C23C14/34
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