| 摘要 |
An electronic package designed to package silicon carbide discrete compon ents for silicon carbide chips. The electronic package allows thousands of p ower cycles and/or temperature cycles between -550�C to 3000�C. The present invention can also tolerate continuous operation at 3000�C, due to high ther mal conductivity which pulls heat away from the chip. The electronic package can be designed to house a plurality of interconnecting chips within the pa ckage. The internal dielectric is able to withstand high voltages, such as 1 200 volts, and possibly up to 20,000 volts. Additionally, the package is des igned to have a low switching inductance by eliminating wire bonds. By elimi nating the wire bonds, the electronic package is able to withstand an inject ion mold. |
