| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent generation of leakage current into a bulk part of an active region except for a source/drain junction region by forming a leakage current prevention layer in a moat region of a boundary between an isolation layer and an active region. An isolation layer(108) is formed on a semiconductor substrate(100) of a sense amplifier region to define an active region(106). A moat region(M) is formed in a boundary between the active region and the isolation layer. A leakage current prevention layer is formed in the moat region. A gate is formed at an upper part of the semiconductor substrate. A source/drain junction region(112) is formed at a lower part of the semiconductor substrate corresponding to a lateral surface of the gate. An interlayer dielectric(114) including a bitline contact plug is formed at the upper part of the semiconductor substrate.
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