| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystallization method of silicon for manufacturing polysilicon with excellent crystal characteristics. SOLUTION: The crystallization method of the silicon includes: (a) a step of disposing a metal catalyst on amorphous silicon; (b) a step of performing thermal treatment at a first thermal treatment temperature so as to crystallize the amorphous silicon on which the metal catalyst is disposed; and (c) a step of performing the thermal treatment at a second thermal treatment temperature higher than the first thermal treatment temperature so as to remove crystal defects inside silicon crystal grains generated in the step (b). COPYRIGHT: (C)2009,JPO&INPIT
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