发明名称 半導体装置及び表示装置
摘要 Provided is a semiconductor device which can operate stably even in the case where a transistor thereof is a depletion transistor. The semiconductor device includes a first transistor for supplying a first potential to a first wiring, a second transistor for supplying a second potential to the first wiring, a third transistor for supplying a third potential at which the first transistor is turned on to a gate of the first transistor and stopping supplying the third potential, a fourth transistor for supplying the second potential to the gate of the first transistor, and a first circuit for generating a second signal obtained by offsetting a first signal. The second signal is input to a gate of the fourth transistor. The potential of a low level of the second signal is lower than the second potential.
申请公布号 JP5873755(B2) 申请公布日期 2016.03.01
申请号 JP20120108073 申请日期 2012.05.10
申请人 株式会社半導体エネルギー研究所 发明人 梅崎 敦司
分类号 H03K17/687;H03K19/003 主分类号 H03K17/687
代理机构 代理人
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