| 摘要 |
A group III semiconductor luminescent device comprises a substrate (1), a buffer layer (2), an n-type nitride semiconductor layer (3), an active layer (4) and a p-type nitride semiconductor layer (5) that are disposed from bottom to top in sequence and that form a boss (16). An upper surface of the boss (16) is an upper surface of the p-type nitride semiconductor layer (5). An N-type line electrode (14) is further disposed on the surface of the boss (16). The active layer (4) below the N-type line electrode (14) is etched or the active layer (4) below the N-type line electrode (14) is partially etched. The N-type line electrode (14) is further connected to an N-type bonding pad (12). The N-type bonding pad (12) is located above the active layer (4). The N-type line electrode (14) and the N-type bonding pad (12) form an N-type electrode (9). The luminescent device further comprises a P-type electrode (8) that comprises a P-type bonding pad (11) and a P-type line electrode (13). The P-type line electrode (8) is located on the boss (16). The problem that the active layer is excessively etched is solved; the active layer is added and accordingly the electrical and optical features are improved, the light-emitting area is increased, and the operating voltage is reduced, and the brightness is improved. |
