| 摘要 |
A semiconductor device capable of ensuring a withstand voltage of a transistor and reducing a forward voltage of a Schottky barrier diode in a package with the transistor and the Schottky barrier diode formed on chip, and a semiconductor package formed by a resin package covering the semiconductor device are provided. The semiconductor device 1 includes a semiconductor layer 22, a transistor area D formed on the semiconductor layer 22 and constituting the transistor 11, and a diode area C formed on the semiconductor layer 22 and constituting the Schottky barrier diode 10. The semiconductor layer 22 in the diode area C is thinner than the semiconductor layer 22 in the transistor area D. |
