发明名称 CMP COMPOSITION AND METHOD FOR POLISHING RIGID DISKS
摘要 The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate, such as a nickel-phosphorous substrate. The composition contains water, silica particles, a first alcohol comprising one or more of monohydric alcohol, polyhydric alcohol, and diglycol, a second alcohol in the form of polyvinyl alcohol, a nickel complexing agent, and optionally hydrogen peroxide, pH adjuster, and/or biocide. The method involves contacting the substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.
申请公布号 US2016288290(A1) 申请公布日期 2016.10.06
申请号 US201615091275 申请日期 2016.04.05
申请人 Cabot Microelectronics Corporation 发明人 LI Tong;WHITE Michael;PALANISAMY CHINNATHAMBI Selvaraj;ZHANG Ke
分类号 B24B37/24;C09G1/02 主分类号 B24B37/24
代理机构 代理人
主权项 1. A polishing composition comprising: (a) silica present in an amount of from about 0.01 wt. % to about 10 wt. %; (b) first alcohol comprising one or more of monohydric alcohol, polyhydric alcohol, and diglycol; (c) nickel complexing agent; (d) second alcohol consisting of polyvinyl alcohol; and water, wherein the polishing composition has a pH of from about 1 to about 5.
地址 Aurora IL US