| 摘要 |
PROBLEM TO BE SOLVED: To give stable electrical characteristics to a semiconductor device using an oxide semiconductor and to improve the reliability.SOLUTION: In a transistor including an oxide semiconductor film, an insulating film contacted with the oxide semiconductor film is formed by using a material containing a group XIII element and oxygen to successfully maintain a state of an interface with the oxide semiconductor film. Further, the insulating film includes a region containing oxygen more than a stoichiometric composition ratio, and thereby, oxygen is supplied to the oxide semiconductor film to reduce oxygen defects in the oxide semiconductor film. In addition, the insulating film contacted with the oxide semiconductor film is made have a lamination structure, and films containing aluminum are provided on and under the oxide semiconductor film to prevent penetration of water into the oxide semiconductor film.SELECTED DRAWING: Figure 1 |
