METHOD OF SELECTIVE-ETCHING THIN FILM FORMED ON VERTICAL STRUCTURE AND METHOD OF MANUFACTURING MEMORY DEVICE USING THE SAME METHOD

摘要

A method for selectively etching a thin film deposited on a vertical structure is provided to form desired various patterns by selectively etching a thin film deposited on a vertical structure by a simple process. A vertical structure(20) is formed on a substrate(10) by using a first material. A thin film is deposited on the outer surface of the vertical structure by using a second material. A resist material is deposited on the substrate so that the lateral lower part of the thin film is covered with the resist material and the upright upper part and the lateral upper part of the thin film are exposed. The upright upper part and the lateral upper part of the thin film are wet-etched to expose the upper region of the vertical structure surrounded by the upright upper part and the lateral upper part of the thin film. The resist material is removed. The vertical structure can be made of one of a nano wire, a post or a cylinder.