发明名称 TECHNIQUES FOR DEPOSITING METALLIC FILMS USING ION IMPLANTATION SURFACE MODIFICATION FOR CATALYSIS OF ELECTROLESS DEPOSITION
摘要 Techniques for deposition metallic films (150) using ion implantation surface modification for catalysis of electroless deposition are disclosed. In one particular exemplary embodiment, the techniques may be realized as a method for depositing a metallic film (150). The method may comprise depositing a catalyzing material on a structure (100), wherein the structure (100) comprises a substrate (1 10), a dielectric layer (120) on the substrate ( 1 10), and a resist layer (130) on the dielectric layer (120), wherein the dielectric layer (120) and the resist layer (130 have one or more openings (140). The method may also comprise stripping the resist layer (130). The method may further comprise depositing a metallic film (150) on the catalyzing material in the one or more openings (140) of the structure (100) to fill the one or more openings (140).
申请公布号 WO2007092529(A8) 申请公布日期 2008.09.25
申请号 WO2007US03315 申请日期 2007.02.07
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.;NUNAN, PETER, D.;EROKHIN, YURI 发明人 NUNAN, PETER, D.;EROKHIN, YURI
分类号 C23C18/28;C23C14/04;C23C14/48;C23C18/30;H01L29/00 主分类号 C23C18/28
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