发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE OBTAINED BY THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, in which package curvature can be suppressed even when a package substrate is made thin, and to provide the semiconductor device obtained by the same. <P>SOLUTION: The semiconductor device is manufactured through steps of: disposing a plurality of bumps 17 formed on a semiconductor element 11 at corresponding electrodes 21 on the substrate 10; disposing a heat dissipation plate on a surface opposite to the surface of the semiconductor element 11 where the bumps 17 are formed via a connection material 18; connecting the bumps 17 of the semiconductor element 11, the substrate 10, and the heat dissipation plate together at a batch; and supplying an underfill resin 12 to between the semiconductor element 11 and substrate 10. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009088380(A) 申请公布日期 2009.04.23
申请号 JP20070258639 申请日期 2007.10.02
申请人 HITACHI CHEM CO LTD 发明人 KURABUCHI KAZUHIKO
分类号 H01L23/12 主分类号 H01L23/12
代理机构 代理人
主权项
地址