| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a process for spin-on depositing a silicon dioxide-containing film under oxidative conditions for gap-filling in high aspect ratio features for shallow trench isolation used in memory and logic circuit-containing semiconductor substrates, such as, silicon wafers having one or more integrated circuit structures contained thereon. Ž<P>SOLUTION: The process comprises a process for preparing the semiconductor substrate having high aspect ratio; a process for contacting the semiconductor substrate with a liquid formulation comprising a low molecular weight aminosilane; a process for forming a film by spreading the liquid formulation over the semiconductor substrate; and a process for heating the film at elevated temperatures under oxidative conditions. Compositions for such processes are also disclosed. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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