| 发明名称 |
SEMICONDUCTOR DEVICES AND FABRICATING METHODS THEREOF |
| 摘要 |
Provided is a semiconductor device and a fabricating method thereof. The semiconductor device includes a first trench having a first depth to define a fin, a second trench formed directly adjacent the first trench having a second depth that is greater than the first depth, a field insulation layer filling a portion of the first trench and a portion of the second trench, and a protrusion structure protruding from a bottom of the first trench and being lower than a surface of the field insulation layer. |
| 申请公布号 |
US2016190131(A1) |
申请公布日期 |
2016.06.30 |
| 申请号 |
US201514976082 |
申请日期 |
2015.12.21 |
| 申请人 |
YOU Jung-Gun;SUNG Sug-Hyun |
发明人 |
YOU Jung-Gun;SUNG Sug-Hyun |
| 分类号 |
H01L27/088;H01L29/06 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first trench having a first depth that defines a fin; a second trench that is directly adjacent the first trench and that has a second depth that is greater than the first depth; a field insulation layer that fills a portion of the first trench and a portion of the second trench; and a protrusion structure that protrudes from a bottom of the first trench and that is lower than a surface of the field insulation layer. |
| 地址 |
Ansan-si KR |
