发明名称 |
METHOD FOR FORMING SEMICONDUCTOR STRUCTURE WITH CONTACT OVER SOURCE/DRAIN STRUCTURE |
摘要 |
A semiconductor structure and a method for forming the same are provided. The method includes forming a source/drain structure in a substrate and forming a metal layer over the source/drain structure. The method for manufacturing a semiconductor structure further includes performing an annealing process such that a portion of the metal layer reacts with the source/drain structure to form a metallic layer on the source/drain structure. The method for manufacturing a semiconductor structure further includes performing an etching process to remove an unreacted portion of the metal layer on the metallic layer and forming a contact over the metallic layer. In addition, the etching process includes using an etching solvent, and the etching solvent includes (a) a first component, including H2SO4, HCl, HF, H3PO4, or NH4OH and (b) a second component, including propylene carbonate, ethylene carbonate, diethyl carbonate, acetonitrile, or a combination thereof. |
申请公布号 |
US2016254370(A1) |
申请公布日期 |
2016.09.01 |
申请号 |
US201615152205 |
申请日期 |
2016.05.11 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
KELLY Andrew Joseph;ONIKI Yusuke |
分类号 |
H01L29/66;H01L21/8234;H01L29/417;H01L29/45;H01L21/3213;H01L29/08 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a semiconductor structure, comprising:
forming a source/drain structure over a substrate; forming a metal layer over the source/drain structure; reacting a portion of the metal layer with the source/drain structure to form a metallic layer; and performing an etching process to remove an unreacted portion of the metal layer, wherein the etching process comprises using an etching solvent, and the etching solvent comprises (a) a first component, comprising H2SO4, HCl, HF, H3PO4, or NH4OH; and (b) a second component, comprising propylene carbonate (PC), ethylene carbonate (EC), diethyl carbonate (DEC), acetonitrile, or a combination thereof. |
地址 |
Hsinchu TW |