PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

摘要

A plasma processing apparatus includes a sample stage disposed in a processing chamber within a vacuum chamber. A wafer mounted on a top surface of the sample stage is processed by using plasma formed in the processing chamber. The plasma processing apparatus further includes electrodes disposed on a part on a center side and a part on a peripheral side within the sample stage and supplied with radio frequency power. Large amplitude and small amplitude are repeated with a predetermined period in each of the radio frequency powers supplied respectively to the electrode on the center side and the electrode on the peripheral side. A control apparatus adjusts a length of large amplitude term, or the length of the large amplitude term and a ratio of the length to a period in each of the radio frequency powers to different values.

主权项

1. A plasma processing apparatus comprising:
a sample stage disposed in a processing chamber within a vacuum chamber, a wafer mounted on a top surface of the sample stage being processed by using plasma formed in the processing chamber; an electrode disposed on a part on a center side within the sample stage and supplied with radio frequency power; an electrode disposed on a part on a peripheral side within the sample stage and supplied with radio frequency power; and a control apparatus for adjusting a length of large amplitude term, or the length of the large amplitude term and a ratio of the length to a period in each of the radio frequency powers to different values, large amplitude and small amplitude being repeated with a predetermined period in each of the radio frequency powers supplied respectively to the electrode on the center side and the electrode on the peripheral side.