发明名称 SACRIFICIAL-FILM REMOVAL METHOD AND SUBSTRATE PROCESSING DEVICE
摘要 The present invention is a sacrificial-film removal method of removing a sacrificial film from a surface of a substrate provided with a plurality of struts and the sacrificial film embedded between the plurality of struts, including: a wet etching step where the sacrificial film is removed to its halfway depth by supplying an etchant to the surface of the substrate; a rinse step where a residue adhering to the surface of the substrate is washed out by supplying a rinsing liquid to the surface of the substrate after the wet etching step; a drying step where a liquid component on the surface of the substrate is removed after the rinse step; and a dry etching step where the sacrificial film remaining on the surface of the substrate is removed by supplying an etching gas to the surface of the substrate after the drying step.
申请公布号 US2016254162(A1) 申请公布日期 2016.09.01
申请号 US201415032516 申请日期 2014.10.27
申请人 SCREEN Holdings Co., Ltd. ;CENTRAL GLASS COMPANY, LIMITED 发明人 Okutani Manabu;Umezaki Tomonori;Kikuchi Akiou
分类号 H01L21/306;H01L21/02;H01L21/3065 主分类号 H01L21/306
代理机构 代理人
主权项 1. A sacrificial-film removal method of removing a sacrificial film from a surface of a substrate provided with a plurality of struts and the sacrificial film embedded between the plurality of struts, including: a wet etching step where the sacrificial film is removed to its halfway depth by supplying an etchant to the surface of the substrate; a rinse step where a residue adhering to the surface of the substrate is washed out by supplying a rinsing liquid to the surface of the substrate after the wet etching step; a drying step where a liquid component on the surface of the substrate is removed after the rinse step; and a dry etching step where the sacrificial film remaining on the surface of the substrate is removed by supplying an etching gas to the surface of the substrate after the drying step.
地址 Kyoto JP