| 发明名称 |
SEMICONDUCTOR SUBSTRATE TREATMENT LIQUID, TREATMENT METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR-SUBSTRATE PRODUCT USING THESE |
| 摘要 |
Provided is a semiconductor substrate treatment liquid which removes an organic material on the top of a semiconductor substrate from the semiconductor substrate having a Ge-containing layer that includes germanium (Ge) or cleans the surface thereof, and the treatment liquid includes a liquid chemical component which adjusts the pH of the treatment liquid to be in a range of 5 to 16 and an anticorrosive component which is used to prevent the Ge-containing layer. |
| 申请公布号 |
US2016254139(A1) |
申请公布日期 |
2016.09.01 |
| 申请号 |
US201615152676 |
申请日期 |
2016.05.12 |
| 申请人 |
FUJIFILM Corporation |
发明人 |
KAMIMURA Tetsuya;SUGISHIMA Yasuo;MIZUTANI Atsushi |
| 分类号 |
H01L21/02;B08B3/08;B08B7/00;C11D7/26;B08B3/04;B08B3/10;C11D11/00;C11D7/32;H01L21/3105;B08B9/00 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor substrate treatment liquid which removes an organic material on the top of a semiconductor substrate from the semiconductor substrate having a Ge-containing layer that includes germanium (Ge) or cleans the surface thereof, the treatment liquid comprising:
a liquid chemical component which adjusts the pH of the treatment liquid to be in a range of 5 to 16, and an anticorrosive component which is used to prevent corrosion of the Ge-containing layer. |
| 地址 |
Tokyo JP |
