| 主权项 |
1. A method of depositing a silicon-containing film using a film deposition apparatus, the apparatus including a turntable provided in a process chamber and configured to receive a substrate thereon, first and second process areas provided apart from each other along a rotational direction of the turntable, a first process gas supplying unit configured to supply a first process gas to the substrate in the first process area, and a second process gas supplying unit configured to supply a second process gas to the substrate in the second process area, the method comprising steps of:
forming a seed layer on a surface of the substrate by supplying an aminosilane gas from the first process gas supplying unit for a predetermined period of time while rotating the turntable; supplying a boron-containing gas as a catalytic gas from the first gas supplying unit to the surface of the substrate while rotating the turntable after finishing the step of forming the seed layer on the surface of the substrate; and supplying a silane-based gas as a source gas from the second process gas supplying unit to the surface of the substrate while rotating the turntable and causing silicon atoms contained in the silane-based gas to bond with each other on the surface of the substrate by a catalytic action of the boron-containing gas. |
