THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME

摘要

A thin film transistor array panel includes a gate line disposed on a substrate, the gate line including a gate electrode, a gate insulating layer disposed on the gate electrode, a semiconductor layer disposed on the substrate, the semiconductor layer including an oxide semiconductor, a data line disposed on the substrate and crossing the gate line, a data line layer including a source electrode connected to the data line and a drain electrode facing the source electrode, and a passivation layer covering the source electrode and the drain electrode. The data line layer includes copper or a copper alloy, and the semiconductor layer includes a copper doped oxide semiconductor. A content of copper doped on the oxide semiconductor is 0.2% to 0.82%.

主权项

1. A thin film transistor array panel, comprising:
a gate line disposed on a substrate, the gate line comprising a gate electrode; a gate insulating layer disposed on the gate electrode; a semiconductor layer disposed on the substrate, the semiconductor layer comprising an oxide semiconductor; a data line disposed on the substrate and crossing the gate line; a data line layer comprising a source electrode connected to the data line and a drain electrode facing the source electrode; and a passivation layer covering the source electrode and the drain electrode, wherein the data line layer comprises copper or a copper alloy, and the semiconductor layer comprises a copper doped oxide semiconductor, and a content of copper doped on the oxide semiconductor is 0.2% to 0.82%.