Semiconductor Device with Cell Trench Structures and a Contact Structure

摘要

A semiconductor device includes first and second cell trench structures extending from a first surface into a semiconductor body, a first semiconductor mesa separating the cell trench structures. The first cell trench structure includes a first buried electrode and a first insulator layer. A first vertical section of the first insulator layer separates the first buried electrode from the first semiconductor mesa. The first semiconductor mesa includes a source zone of a first conductivity type directly adjoining the first surface. The semiconductor device further includes a capping layer on the first surface and a contact structure having a first section in an opening of the capping layer and a second section in the first semiconductor mesa or between the first semiconductor mesa and the first buried electrode. A lateral net impurity concentration of the source zone parallel to the first surface increases in the direction of the contact structure.

主权项

1. A semiconductor device, comprising:
a first and a second cell trench structure extending from a first surface into a semiconductor body, wherein a first semiconductor mesa separates the first and second cell trench structures, the first cell trench structure comprises a first buried electrode and a first insulator layer, a first vertical section of the first insulator layer separates the first buried electrode from the first semiconductor mesa, and the first semiconductor mesa comprises a source zone of a first conductivity type directly adjoining the first surface; a capping layer on the first surface; and a contact structure comprising a first section in an opening of the capping layer and a second section in the first semiconductor mesa or between the first semiconductor mesa and the first buried electrode, wherein a lateral net impurity concentration of the source zone parallel to the first surface increases in the direction of the contact structure.