| 发明名称 |
ELECTRONIC DEVICE |
| 摘要 |
An electronic device is presented; the device comprises an electrode structure located in electrical contact with a semiconducting element. The electrode structure is configured with two or more groups of regions comprising regions of a first group having first charge injection properties and regions of a second group having second charge injection properties being lower than the first charge injection properties. The regions of the second group are configured to provide barrier for injection of charge carriers from regions of the first group into the semiconductor element to thereby allow tailoring of desired electronic properties of the device. |
| 申请公布号 |
US2016300916(A1) |
申请公布日期 |
2016.10.13 |
| 申请号 |
US201415100689 |
申请日期 |
2014.12.07 |
| 申请人 |
TECHNION RESEARCH & DEVELOPMENT FOUNDATION LIMITED |
发明人 |
Tessler Nir;Ben Sasson Ariel Jaques;Greenman Michael |
| 分类号 |
H01L29/417;H01L29/78;H01L29/861;H01L29/08;H01L29/45 |
主分类号 |
H01L29/417 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An electronic device comprising a source electrode and a drain electrode separated between them and located in electrical contact with a semiconducting channel region; the source electrode is configured as electrode structure having two or more groups of regions comprising regions of a first group having first charge injection properties and regions of a second group having second charge injection properties being lower than the first charge injection properties; regions of the second group being configured to provide barrier for injection of charge carriers from regions of the first group of the source electrode into the semiconductor channel region. |
| 地址 |
Haifa IL |
