发明名称 |
THIN FILM TRANSISTOR, ORGANIC LIGHT EMITTING DIODE DISPLAY, AND METHOD FOR MANUFACTURING ORGANIC LIGHT EMITTING DIODE DISPLAY |
摘要 |
A thin film transistor includes;a gate electrode including a gate pattern positioned on a substrate and a gate clad pattern covering the gate pattern. An oxide semiconductor layer is positioned on the gate electrode. A source electrode and a drain electrode are positioned on the oxide semiconductor layer. The source electrode and the drain electrode are ach in contact with end portions of the oxide semiconductor layer. |
申请公布号 |
US2016300896(A1) |
申请公布日期 |
2016.10.13 |
申请号 |
US201514927000 |
申请日期 |
2015.10.29 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
PARK KYUNG HOON |
分类号 |
H01L27/32;H01L51/56;H01L29/786 |
主分类号 |
H01L27/32 |
代理机构 |
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代理人 |
|
主权项 |
1. A thin film transistor comprising:
a gate electrode comprising a gate pattern positioned on a substrate and a gate clad pattern covering the gate pattern; an oxide semiconductor layer positioned on the gate electrode; and a source electrode and a drain electrode positioned on the oxide semiconductor layer, wherein the source electrode and the drain electrode are each in contact with end portions of the oxide semiconductor layer. |
地址 |
Yongin-si KR |