发明名称 THIN FILM TRANSISTOR, ORGANIC LIGHT EMITTING DIODE DISPLAY, AND METHOD FOR MANUFACTURING ORGANIC LIGHT EMITTING DIODE DISPLAY
摘要 A thin film transistor includes;a gate electrode including a gate pattern positioned on a substrate and a gate clad pattern covering the gate pattern. An oxide semiconductor layer is positioned on the gate electrode. A source electrode and a drain electrode are positioned on the oxide semiconductor layer. The source electrode and the drain electrode are ach in contact with end portions of the oxide semiconductor layer.
申请公布号 US2016300896(A1) 申请公布日期 2016.10.13
申请号 US201514927000 申请日期 2015.10.29
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 PARK KYUNG HOON
分类号 H01L27/32;H01L51/56;H01L29/786 主分类号 H01L27/32
代理机构 代理人
主权项 1. A thin film transistor comprising: a gate electrode comprising a gate pattern positioned on a substrate and a gate clad pattern covering the gate pattern; an oxide semiconductor layer positioned on the gate electrode; and a source electrode and a drain electrode positioned on the oxide semiconductor layer, wherein the source electrode and the drain electrode are each in contact with end portions of the oxide semiconductor layer.
地址 Yongin-si KR