DEVICES HAVING MULTIPLE THRESHOLD VOLTAGES AND METHOD OF FABRICATING SUCH DEVICES

摘要

Methods of fabricating devices (e.g., FDSOI devices) having multiple threshold voltages are described. One method includes providing a first fixed charge region proximate to an interface of an insulating (e.g., buried oxide (BOX) layer) and a semiconductor substrate for a first device. The first charge region has a first configuration of fixed charges. The method also includes providing a second fixed charge region proximate to the interface of the insulating layer and the semiconductor substrate for the second device. The second charge region has a second configuration of fixed charges that is different than the first configuration.

主权项

1. A method of fabricating devices on a semiconductor substrate, the method comprising:
providing a first fixed charge region to the semiconductor substrate below an interface between an insulating layer above the semiconductor substrate and the semiconductor substrate for a first device of the devices, the first fixed charge region having a first configuration; and providing a second fixed charge region to the semiconductor substrate below an interface between the insulating layer above the semiconductor substrate and the semiconductor substrate for a second device of the devices, the second fixed charge region having a second configuration, the first configuration being different than the second configuration.