METHOD FOR PATTERNING A MICROSTRUCTURE

摘要

The invention relates to a method for patterning one or more portions of a microstructure comprised of a flexible substrate, a conductor disposed on the substrate, and a metal layer disposed on the conductor, wherein the conductor is comprised of a stack of a first and a second transparent conductive oxide (TCO) layer, and a metal doped silicon oxide layer sandwiched between the two TCO layers.

主权项

1. A method for patterning one or more portions of a microstructure comprised of a flexible substrate, a conductor disposed on the substrate, and a metal layer disposed on the conductor, wherein the conductor is comprised of a stack of a first and a second transparent conductive oxide (TCO) layer, and a metal doped silicon oxide layer sandwiched between the two TCO layers, the method comprising:
patterning the metal layer to define one or more portions of the metal layer to be removed; contacting the microstructure with a metal chloride etchant to remove the defined one or more portions of the metal layer, thereby exposing one or more portions of the underlying first TCO layer, wherein the exposed one or more portions of the first TCO layer are sequentially removed by the metal chloride etchant, thereby exposing one or more portions of the underlying doped silicon oxide layer; contacting the microstructure with an alkali metal based etchant to remove the exposed one or more portions of the doped silicon oxide layer, thereby exposing one or more portions of the underlying second TCO layer, wherein the exposed one or more portions of the second TCO layer are sequentially removed by the alkali metal base, thereby exposing one or more portions of the underlying substrate, wherein the substrate is comprised of a polymer or copolymer that is resistant or substantially resistant to hydrolysis by the alkali metal based etchant.