| 摘要 |
In one embodiment, a junction (1) at which at least two conductors (32, 52) are connected together includes a compound region containing Cu, Sn and at least one element selected from the group consisting of Si, B, Ti, Al, Ag, Bi, In, Sb, Ga and Zn. The compound region forms a nanocomposite metal diffusion region (321, 521) with the conductor (32, 52). The compound region may contain at least two kinds of components selected from the group consisting of a first metal component, a second metal component and a third metal component, the first metal component containing Cu and at least one element selected from the group consisting of Si, B, Ti, Al, Ag and Zn; the second metal component containing Sn, Cu and at least one element selected from the group consisting of Si, B, Ti, Al, Ag and Zn; the third metal component containing: (a) Sn, Bi, Ga and at least one element selected from the group consisting of Si, B, Ti, Al, Ag and Zn; or (b) Sn, Bi, In, Sb and at least one element selected from the group consisting of Ga, Si, B, Ti, Al, Ag and Zn, wherein the melting point T1 of the first metal component, the melting point T2 of the second metal component and the melting point T3 of the third metal component satisfy the relationship T1>T2>T3. In other embodiments, a through conductor (72) provided in a hole or groove in a substrate (71) and terminal conductors (74, 75) or a metallisation trace (92) contain Cu, Sn and at least one element selected from the group consisting of Si, B, Ti, Al, Ag, Bi, In, Sb, Ga and Zn having a nanocomposite metal diffusion region within. |
