| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulation film with a low dielectric constant and a high mechanical strength useful for an inter-layer insulation film or the like for a semiconductor device. SOLUTION: As the material of the insulation film, 1,3,5,7-tetravinyl cyclo siloxane, 1,3,5,7-tetraisopropyl cyclo siloxane, 1,2,3-trivinyl disiloxane, 1,2,3-triisopropyl disiloxane, vinylsilane, isopropylsilane, vinyl dihydroxysilane, or isopropyl dihydroxysilane or the like is used and the insulation film is formed by the plasma CVD method; the composition is expressed as 1.6≤β≤2.0, 0.8≤γ≤16.0, and 1.2≤δ≤48.0, wherein Si:O:C:H=α:β:γ:δandα=1. On producing film, CO<SB>2</SB>, O<SB>2</SB>, H<SB>2</SB>O, NO, N<SB>2</SB>O, NO<SB>2</SB>, CO, H<SB>2</SB>, chain hydrocarbon containing any of vinyl group, i-propyl group, n-butyl group and t-butyl group, alcohol group, or ether group may be accompanied. COPYRIGHT: (C)2007,JPO&INPIT
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