| 摘要 |
PROBLEM TO BE SOLVED: To solve the problems that a nonvolatile memory element is difficult to miniaturize and to speed up since a multilayer film is buried in the same hole, and a special process or a process condition is necessary to bury the multilayer film. SOLUTION: A process compatible with a semiconductor process is used to form a lower electrode 27 and an upper electrode 28 in a contact hole respectively through interlayer insulation films 23 and 25, and a variable resistive film 24 is sandwiched between both electrodes, thereby forming a memory part 29. The memory 29 is surrounded by the interlayer insulation films with a low dielectric constant. Further, a cross-point nonvolatile memory element 20 is suitable for integration and speedup as it is compatible with a CMOS process or the like owing to its element structure. COPYRIGHT: (C)2007,JPO&INPIT
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