| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory device with high density integration especially in the bit line direction. SOLUTION: The ferroelectric memory device has bit lines BL11 to 1n and BL21 to 2n connected to a sense amp 140A together with bit lines BL31 to 3n, and BL41 to 4n connected to a sense amp 140B in an approximately opposite direction. Therefore, in an extended direction of bit line BL, arranging interval of memory cells MC in the memory cell array 110 to 116 can be narrowed, thereby providing a ferroelectric memory device with high density integration. COPYRIGHT: (C)2007,JPO&INPIT
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