| 摘要 |
The present disclosure is related to a photovoltaic device for conversion of light into electricity and the material manufacturing steps deposited by plasma. The device is composed by the following configuration: p-i-n: n-i(1)-ATH-i(2), i(2)-ATH2-i(3),...,i(x-1)-ATH-i(x)-p, or n-i-p: p-i(1)-ATH-i(2), i(2)-ATH2-i(3),...,i(x-1)-ATH-i(x)-n, with illumination through the substrate or illumination at the top part thereof and intrinsic materials with different bandwidth organized in such a way that it absorbs light in the visible, red-infrared and UV range. The final structure is provided with a film in order to assist in conveying the hollows between these two materials, p- and n-type semiconducting doped films in order to create a junction with internal electric field, opaque reflector electrode and the transparent front electrode. |
