发明名称 |
Semiconductor crystal, fabrication method thereof, and semiconductor device |
摘要 |
A Si1-xGex/Si1-yCy short-period superlattice which functions as a single SiGeC layer is formed by alternately growing Si1-xGex layers (0 < x < 1) and Si1-yCy layers (0 < y < 1) each having a thickness corresponding to several atomic layers which is small enough to prevent discrete quantization levels from being generated. This provides a SiGeC mixed crystal which is free from Ge-C bonds and has good crystalline quality and thermal stability. The Si1-xGex/Si1-yCy short-period superlattice is fabricated by a method in which Si1-xGex layers and Si1-yCy layers are epitaxially grown alternately, or a method in which a Si/Si1-xGex short-period superlattice is first formed and then C ions are implanted into the superlattice followed by annealing for allowing implanted C ions to migrate to Si layers. <IMAGE> |
申请公布号 |
EP1020898(B1) |
申请公布日期 |
2008.03.19 |
申请号 |
EP20000100591 |
申请日期 |
2000.01.12 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD |
发明人 |
SAITOH, TOHRU;KANZAWA, YOSHIHIKO;KATAYAMA, KOJI;NOZAWA, KATSUYA;SUGAHARA, GAKU;KUBO, MINORU |
分类号 |
H01L29/15;C30B23/02;H01L21/04;H01L21/20;H01L21/203;H01L21/205;H01L21/265;H01L29/10;H01L29/165 |
主分类号 |
H01L29/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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