| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing method in which polishing precision and productivity can compatibly be ensured by precisely managing film thicknesses without lowering production efficiency by increasing a frequency of preliminary test operation in a stage wherein films of a plurality of materials of a semiconductor wafer are continuously polished. <P>SOLUTION: In a chemical-mechanical polishing step using a semiconductor wafer polishing system, measured values of all or part of device state parameters consisting of the temperature of a polishing pad, the torque of a turntable, and the torque of a polishing head are continuously sampled each time wafer polishing is performed, and recorded as time-series data in a storage device. Only a section corresponding to polishing of a lowermost-layer film is segmented from continuous sampling time-series data of measured values of device states, and the segmented continuous sampling time-series data are used to predict a polishing amount or polishing rate of the lowermost-layer film. Then, a polishing time optimizing the polishing amount of the lowermost-layer film is calculated and the wafer is polished. <P>COPYRIGHT: (C)2009,JPO&INPIT |
