| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a structure of a novel magnetoresistance effect element, wherein the magnetoresistance effect element structure uses a semiconductor oxide layer as a spacer layer so that the deviation of the property of the element or temporal deterioration due to heat or stress in processing steps hardly occurs. <P>SOLUTION: The semiconductor oxide layer used for a spacer layer has an interface protection layer containing nitrogen element. The interface protection layer is formed in a portion contacted to an insulation layer formed for electrically protecting the side of a CPP-GMR element. Thus, a nitride compound having a high covalent bonding property is formed on the contact plane, and the variation and deterioration of the element property is suppressed by suppressing the movement of oxygen in the semiconductor oxide layer. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
