CRYSTAL GROWTH APPARATUS, METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND SILICON CARBIDE EPITAXIAL SUBSTRATE

摘要

A crystal growth apparatus (50) is provided with: a chamber (20) which comprises a gas feed port (21), a gas discharge port (22), a welded part and a water cooling unit that is configured so as to be capable of water cooling a portion that includes at least the welded part; an exhaust pump (30) which is connected to the gas discharge port (22); and a dew-point meter (40) which is arranged between the gas discharge port (22) and the exhaust pump (30), and which is configured so as to be capable of measuring the dew point of a gas that has passed through the gas discharge port (22).